Nucleation and growth of HfO$_2$ layers on graphene by CVD

Grzegorz Lupina; Mindaugas Lukosius; Julia Kitzmann; Jarek Dabrowski; Andre Wolff; Wolfgang Mehr

doi:10.1063/1.4828660

Nucleation and growth of HfO$_2$ layers on graphene by CVD

Materials Science 2013-11-06 v1

Authors: Grzegorz Lupina , Mindaugas Lukosius , Julia Kitzmann , Jarek Dabrowski , Andre Wolff , Wolfgang Mehr

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

A seed layer-free growth of HfO $_2$ on commercially available CVD graphene from various suppliers is investigated. It is revealed that the samples of monolayer graphene transferred from Cu to SiO $_2$ /Si substrates have different coverage with bi- and multi-layer graphene islands. We find that the distribution and number of such islands impact the nucleation and growth of HfO $_2$ by CVD. In particular, we show that the edges and surface of densely distributed bi-layer graphene islands provide good nucleation sites for conformal CVD HfO $_2$ layers. Dielectric constant of 16 is extracted from measurements on graphene- HfO $_2$ -TiN capacitors.

Keywords

HfO2 graphene chemical vapor deposition nucleation and growth bilayer graphene islands dielectric constant capacitors

Cite

@article{arxiv.1311.0988,
  title  = {Nucleation and growth of HfO$_2$ layers on graphene by CVD},
  author = {Grzegorz Lupina and Mindaugas Lukosius and Julia Kitzmann and Jarek Dabrowski and Andre Wolff and Wolfgang Mehr},
  journal= {arXiv preprint arXiv:1311.0988},
  year   = {2013}
}

Comments

4 pages, 6 figures

Nucleation and growth of HfO$_2$ layers on graphene by CVD

Abstract

Keywords

Cite

Comments

Related papers