Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

Suzanne Lancaster; Iciar Arnay; Ruben Guerrero; Adrían Gudín; Thomas Mikolajick; Paolo Perna; Stefan Slesazeck

doi:10.1109/ISAF51494.2022.9870121

Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

Materials Science 2022-09-07 v2 Applied Physics

Authors: Suzanne Lancaster , Iciar Arnay , Ruben Guerrero , Adrían Gudín , Thomas Mikolajick , Paolo Perna , Stefan Slesazeck

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Abstract

Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker interlayers, Ta leads to unstable switching behavior of the HZO film. Conversely, at smaller thicknesses, a higher Pr can be achieved with an oxidized Ta interlayer. In both cases, Pt offers higher endurance. The choice of interlayer may strongly depend on the required application.

Keywords

ferroelectric hzo graphene nucleation layer atomic layer deposition dc sputtering endurance interlayer

Cite

@article{arxiv.2208.14061,
  title  = {Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene},
  author = {Suzanne Lancaster and Iciar Arnay and Ruben Guerrero and Adrían Gudín and Thomas Mikolajick and Paolo Perna and Stefan Slesazeck},
  journal= {arXiv preprint arXiv:2208.14061},
  year   = {2022}
}

Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

Abstract

Keywords

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