Chemical vapor deposition (CVD) is an important method to synthesis grapheme on a substract. Recently, Cu becomes the most popular CVD substrate for graphene growth. Here, we combine electronic structure calculation, molecular dynamics simulation, and thermodynamics analysis to study the graphene growth process on Cu surface. As a fundamentally important but previously overlooked fact, we find that carbon atoms are thermodynamically unfavorable on Cu surface under typical experimental conditions. The active species for graphene growth should thus mainly be CHx instead of atomic carbon. Based on this new picture, the nucleation behavior can be understood, which explains many experimental observations and also provides us a guide to improve graphene sample quality.
@article{arxiv.1101.3851,
title = {First-Principles Thermodynamics of Graphene Growth on Cu Surface},
author = {Wenhua Zhang and Ping Wu and Zhenyu Li and Jinlong Yang},
journal= {arXiv preprint arXiv:1101.3851},
year = {2011}
}