Boron vacancies (VB−) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative F\"orster resonance energy transfer (FRET) between VB− centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of VB− centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of VB− defects.
@article{arxiv.2512.03970,
title = {Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials},
author = {Fraunié Jules and Mikhail M. Glazov and Sébastien Roux and Abraao Cefas Torres-Dias and Cora Crunteanu-Stanescu and Tom Fournier and Maryam S. Dehaghani and Tristan Clua-Provost and Delphine Lagarde and Laurent Lombez and Xavier Marie and Benjamin Lassagne and Thomas Poirier and James H. Edgar and Vincent Jacques and Cedric Robert},
journal= {arXiv preprint arXiv:2512.03970},
year = {2025}
}