We present a comprehensive theoretical investigation of gas sensing in monolayer hexagonal boron nitride (h-BN) based field-effect transistors (FET) using the non-equilibrium Green function formalism and Landauer-B\"{u}ttiker approach. Moving beyond conventional density functional theory analyses, our framework captures the full device level response by incorporating field-dependent quantum transport and temperature effects. We model the impact of NO, H2S, HF and CO2 gases on the band structure and density of states (DOS), carrier concentration, quantum capacitance and I-V characteristics. The results indicate that CO2 followed by NO induce strongest perturbations via mid-gap states and band edge shifts, leading to the appearance of asymmetric Van-Hove singularities with enhanced carrier modulation and quantum capacitance. It is observed that HF induce moderate perturbation while H2S induce weakest response for all temperature and biasing condition. It is found that an applied vertical electric field narrows the band gap via the Stark effect, further boosting mobility and tunability. Temperature influences sensing response by enhancing charge transfer at moderate levels and causing desorption at higher temperatures. We found that CO2 consistently show the highest sensitivity and selectivity followed by NO and HF, while H2S display the weakest response. This study offers a comprehensive framework to engineer h-BN based FET sensors by harnessing intrinsic band modulation and quantum capacitance for molecule discrimination and temperature optimization.
@article{arxiv.2507.15011,
title = {Quantum Capacitance and Electronic Properties of a Hexagonal Boron Nitride based FET Gas Sensor},
author = {Saumen Acharjee},
journal= {arXiv preprint arXiv:2507.15011},
year = {2025}
}