Mott-Schottky analysis is adapted to determine the built-in bias (Vbi) and doping density (N) of lead sulfide-zinc oxide colloidal quantum dot heterojunction solar cells. We show that charge injection barriers at the solar cell's electrodes create a constant capacitance that distorts the junction's depletion capacitance and result in erroneous Vbi and N values when determined through Mott-Schottky analysis. The injection barrier capacitance is taken into account by incorporating a constant capacitance in parallel with the depletion capacitance.
@article{arxiv.1112.1623,
title = {Modified Mott-Schottky Analysis of Nanocrystal Solar Cells},
author = {Shawn M. Willis and Cheng Cheng and Hazel E. Assender and Andrew A. R. Watt},
journal= {arXiv preprint arXiv:1112.1623},
year = {2011}
}