Modeling of a Resonant Tunneling Diode Optical Modulator
Optics
2007-05-23 v1 Instrumentation and Detectors
Abstract
The integration of a double barrier resonant tunneling diode within a unipolar optical waveguide provides electrical gain over a wide bandwidth. Due to the non-linearities introduced by the double barrier resonant tunneling diode an unipolar InGaAlAs/InP optical waveguide can be employed both as optical modulator and optical detector. The modeling results of a device operating as optical modulator agree with preliminary experimental data, foreseeing for an optimized device modulation depths up to 23 dB with chirp parameter between -1 and 0 in the wavelength range analyzed (1520 nm - 1600 nm).
Cite
@article{arxiv.physics/0504006,
title = {Modeling of a Resonant Tunneling Diode Optical Modulator},
author = {J. J. N. Calado and J. M. L. Figueiredo and C. N. Ironside},
journal= {arXiv preprint arXiv:physics/0504006},
year = {2007}
}
Comments
5 pages