Realization of a double barrier resonant tunneling diode for cavity polaritons
Mesoscale and Nanoscale Physics
2014-08-07 v1
Abstract
We report on the realization of a double barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We use a non-resonant beam can be used as an optical gate and control the device transmission. Finally we evidence distortion of the transmission profile when going to the high density regime, signature of polariton-polariton interactions.
Keywords
Cite
@article{arxiv.1305.5069,
title = {Realization of a double barrier resonant tunneling diode for cavity polaritons},
author = {Hai Son Nguyen and Dmitry Vishnevsky and Chris Sturm and Dimitrii Tanese and Dmitry Solnyshkov and Elisabeth Galopin and Aristide Lemaître and Isabelle Sagnes and Alberto Amo and Guillaume Malpuech and Jacqueline Bloch},
journal= {arXiv preprint arXiv:1305.5069},
year = {2014}
}
Comments
5 pages, 4 figures