English

Mimicking Nanoribbon Behavior Using a Graphene Layer on SiC

Materials Science 2010-10-11 v3

Abstract

We propose a natural way to create quantum-confined regions in graphene in a system that allows large-scale device integration. We show, using first-principles calculations, that a single graphene layer on a trenched region of [0001ˉ][000\bar{1}] SiCSiC mimics i)the energy bands around the Fermi level and ii) the magnetic properties of free-standing graphene nanoribbons. Depending on the trench direction, either zigzag or armchair nanoribbons are mimicked. This behavior occurs because a single graphene layer over a SiCSiC surface loses the graphene-like properties, which are restored solely over the trenches, providing in this way a confined strip region.

Keywords

Cite

@article{arxiv.1008.2998,
  title  = {Mimicking Nanoribbon Behavior Using a Graphene Layer on SiC},
  author = {Matheus P. Lima and A. R. Rocha and Antônio J. R. da Silva and A. Fazzio},
  journal= {arXiv preprint arXiv:1008.2998},
  year   = {2010}
}

Comments

4 pages, 4 figures

R2 v1 2026-06-21T16:02:10.093Z