Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy

Takashi Kajiwara; Yuzuru Nakamori; Anton Visikovskiy; Takushi Iimori; Fumio Komori; Kan Nakatsuji; Kazuhiko Mase; Satoru Tanaka

doi:10.1103/PhysRevB.87.121407

Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy

Materials Science 2013-03-27 v1

Authors: Takashi Kajiwara , Yuzuru Nakamori , Anton Visikovskiy , Takushi Iimori , Fumio Komori , Kan Nakatsuji , Kazuhiko Mase , Satoru Tanaka

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Abstract

We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide of (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate, [1-100], well-ordered GNRs with predominantly armchair edges are obtained. These structures, the high density GNRs, enable us to observe the electronic structure at K-points by angle-resolved photoemission spectroscopy, showing clear band-gap opening of at least 0.14 eV.

Keywords

graphene nanoribbons vicinal SiC molecular beam epitaxy armchair edges band gap opening

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@article{arxiv.1210.4304,
  title  = {Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy},
  author = {Takashi Kajiwara and Yuzuru Nakamori and Anton Visikovskiy and Takushi Iimori and Fumio Komori and Kan Nakatsuji and Kazuhiko Mase and Satoru Tanaka},
  journal= {arXiv preprint arXiv:1210.4304},
  year   = {2013}
}

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4 pages, 5 figures

Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy

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