Localized in-gap state in a single electron doped Mott insulator
Strongly Correlated Electrons
2014-12-10 v1
Abstract
Motivated by the recent atomic-scale scanning tunneling microscope (STM) observation for a spatially localized in-gap state in an electron doped Mott insulator, we evaluate the local electronic state of the Hubbard model on the square lattice using the cluster perturbation theory. An in-gap state is found to exist below the upper Hubbard band around the dopant lattice site, which is consistent with the STM measurements. The emergence of this local in-gap state is accompanied with a rapid reduction of the double occupancy of electrons. A similar in-gap state is also found to exist on the triangular lattice. These results suggest that the in-gap state is an inherent feature of Mott insulators independent of the lattice structure.
Cite
@article{arxiv.1402.5787,
title = {Localized in-gap state in a single electron doped Mott insulator},
author = {Weng-Hang Leong and Shun-Li Yu and T. Xiang and Jian-Xin Li},
journal= {arXiv preprint arXiv:1402.5787},
year = {2014}
}