Two-dimensional antiferromagnets, combining the dual advantages of van der Waals (vdW) and antiferromagnetic materials, provide an unprecedented platform for exploring emergent spin-related phenomena. However, electrical manipulation of N\'eel vectors in vdW antiferromagnets - the cornerstone of antiferromagnetic spintronics - remains challenging. Here, we report layer-dependent electrical switching of the N\'eel vector in an A-type vdW antiferromagnet (Fe,Co)3GaTe2 (FCGT) with perpendicular magnetic anisotropy. The N\'eel vector of FCGT with odd-number vdW layers can be 180{\deg} reversed via spin-orbit torques. Furthermore, we achieve field-free switching in an all-vdW, all-antiferromagnet heterostructure of FCGT/CrSBr in which the noncollinear interfacial spin texture breaks the mirror symmetry. Our results establish layer-controlled spin symmetries and interfacial spin engineering as universal paradigms for manipulating antiferromagnetic order, paving the way for realising reliable and efficient vdW antiferromagnetic devices.
@article{arxiv.2504.06764,
title = {Layer-dependent field-free switching of N\'eel vector in a van der Waals antiferromagnet},
author = {Haoran Guo and Zhongchong Lin and Jinhao Lu and Chao Yun and Guanghui Han and Shoutong Sun and Yu Wu and Wenyun Yang and Dongdong Xiao and Zhifeng Zhu and Licong Peng and Yu Ye and Yanglong Hou and Jinbo Yang and Zhaochu Luo},
journal= {arXiv preprint arXiv:2504.06764},
year = {2025}
}