We have used the electromigration technique to fabricate a C60 single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in a SMT with odd number of electrons, where the usual spin-1/2 Kondo effect occurs, with good agreement with theory. In the case of even number of electrons, a low temperature magneto-transport study is provided, which demonstrates a Zeeman splitting of the zero-bias anomaly at energies well below the Kondo scale.
@article{arxiv.0809.2700,
title = {Kondo effects in a C_60 single-molecule transistor},
author = {N. Roch and C. B. Winkelmann and S. Florens and V. Bouchiat and W. Wernsdorfer and F. Balestro},
journal= {arXiv preprint arXiv:0809.2700},
year = {2008}
}