Integrated tunable green light source on silicon nitride
Abstract
Integrated green light sources are essential for telecommunications and quantum applications, while the performance of current on-chip green light generation is still limited in power and tunability. In this work, we demonstrate green light generation in silicon nitride microresonators using photo-induced second-order nonlinearities, achieving up to 3.5 mW green power via second-harmonic generation and densely tunable over a 29 nm range. In addition, we report milliwatt-level all-optical poling (AOP) threshold, allowing for amplifier-free continuous-wave AOP. Furthermore, we demonstrate non-cascaded sum-frequency generation, leveraging the combination of AOP and simultaneous coherent frequency combs generation at 1 m. Such comb-assisted AOP enables switching of the green light generation over an 11 nm range while maintaining the pump within a single resonance. The combination of such highly efficient photo-induced nonlinearity and multi-wavelength AOP enables the realization of low-threshold, high-power, widely-tunable on-chip green sources.
Cite
@article{arxiv.2504.13662,
title = {Integrated tunable green light source on silicon nitride},
author = {Gang Wang and Ozan Yakar and Xinru Ji and Marco Clementi and Ji Zhou and Christian Lafforgue and Jiaye Wu and Jianqi Hu and Tobias J. Kippenberg and Camille-Sophie Brès},
journal= {arXiv preprint arXiv:2504.13662},
year = {2026}
}