We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accompanied by an increased segregation of the phosphorous donors, resulting in a slight broadening of the delta-layer. We demonstrate that a step-flow growth achieved at 530 C provides the best compromise between high crystal quality and minimal dopant redistribution, with an electron mobility ~ 128 cm^2/Vs at a carrier density 1.3x10^14 cm-2, and a 4.2 K phase coherence length of ~ 180 nm.
@article{arxiv.0912.0755,
title = {Influence of encapsulation temperature on Ge:P delta-doped layers},
author = {G. Scappucci and G. Capellini and M. Y. Simmons},
journal= {arXiv preprint arXiv:0912.0755},
year = {2010}
}