English

Image-potential band-gap narrowing at a metal/semiconductor interface

Materials Science 2009-11-07 v1 Strongly Correlated Electrons

Abstract

GW approximation is used to systematically revisit the image-potential band-gap narrowing at metal/semiconductor interfaces proposed by Inkson in the 1970's. Here we have questioned how the narrowing as calculated from quasi-particle energy spectra for the jellium/Si interface depends on rsr_s of the jellium. The gap narrowing is found to only weakly depend on rsr_s (i.e., narrowing 0.3\simeq 0.3 eV even for a large rs=6)r_s = 6). Hence we can turn to smaller polarizability in the semiconductor side as an important factor in looking for larger narrowing.

Keywords

Cite

@article{arxiv.cond-mat/0108412,
  title  = {Image-potential band-gap narrowing at a metal/semiconductor interface},
  author = {Ryotaro Arita and Yoshiaki Tanida and Kazuhiko Kuroki and Hideo Aoki},
  journal= {arXiv preprint arXiv:cond-mat/0108412},
  year   = {2009}
}

Comments

6 pages, 7 figures

R2 v1 2026-07-22T10:26:35.846Z