Plasmon-pole approximation for semiconductor quantum wire electrons
Abstract
We develop the plasmon-pole approximation for an interacting electron gas confined in a semiconductor quantum wire. We argue that the plasmon-pole approximation becomes a more accurate approach in quantum wire systems than in higher dimensional systems because of severe phase-space restrictions on particle-hole excitations in one dimension. As examples, we use the plasmon-pole approximation to calculate the electron self-energy due to the Coulomb interaction and the hot-electron energy relaxation rate due to LO-phonon emission in GaAs quantum wires. We find that the plasmon-pole approximation works extremely well as compared with more complete many-body calculations.
Keywords
Cite
@article{arxiv.cond-mat/9605168,
title = {Plasmon-pole approximation for semiconductor quantum wire electrons},
author = {S. Das Sarma and E. H. Hwang and Lian Zheng},
journal= {arXiv preprint arXiv:cond-mat/9605168},
year = {2009}
}
Comments
16 pages, RevTex, figures included. Also available at http://www-cmg.physics.umd.edu/~lzheng/