Engineering atomic-scale defects is crucial for realizing wafer-scale, single-crystalline transition metal dichalcogenide monolayers for electronic devices. However, connecting atomic-scale defects to larger morphologies poses a significant challenge. Using electron microscopy and atomistic simulations, we provide insights into WS2 crystal growth mechanisms, providing a direct link between synthetic conditions and the microstructure. Dark-field TEM imaging of coalesced monolayer WS2 films illuminates defect arrays that atomic-resolution STEM imaging identifies as translational grain boundaries. Imaging reveals the films to have nearly a single orientation with imperfectly stitched domains. Through atomic-resolution imaging and ReaxFF reactive force field-based molecular dynamics simulations, we observe two types of translational mismatch and discuss their atomic structures and origin. Our results indicate that the mismatch results from relatively fast growth rates. Through statistical analysis of >1300 facets, we demonstrate that the macrostructural features are constructed from nanometer-scale building blocks, describing the system across sub-{\AA}ngstrom to multi-micrometer length scales.
@article{arxiv.2006.11668,
title = {Illuminating Invisible Grain Boundaries in Coalesced Single-Orientation WS2 Monolayer Films},
author = {Danielle Reifsnyder Hickey and Nadire Nayir and Mikhail Chubarov and Tanushree H. Choudhury and Saiphaneendra Bachu and Leixin Miao and Yuanxi Wang and Chenhao Qian and Vincent H. Crespi and Joan M. Redwing and Adri C. T. van Duin and Nasim Alem},
journal= {arXiv preprint arXiv:2006.11668},
year = {2021}
}