Intra-Domain Periodic Defects in Monolayer MoS$_2$

Anupam Roy; Rudresh Ghosh; Amritesh Rai; Atresh Sanne; Kyounghwan Kim; Hema C. P. Movva; Rik Dey; Tanmoy Pramanik; Sayema Chowdhury; Emanuel Tutuc; Sanjay K. Banerjee

doi:10.1063/1.4983789

Intra-Domain Periodic Defects in Monolayer MoS$_2$

Materials Science 2017-05-22 v1

Authors: Anupam Roy , Rudresh Ghosh , Amritesh Rai , Atresh Sanne , Kyounghwan Kim , Hema C. P. Movva , Rik Dey , Tanmoy Pramanik , Sayema Chowdhury , Emanuel Tutuc , Sanjay K. Banerjee

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Abstract

We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films.

Keywords

monolayer mos2 structural defects scanning tunneling microscopy grain boundaries chemical vapor deposition 2d nucleation spiral growth thin films

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@article{arxiv.1705.03051,
  title  = {Intra-Domain Periodic Defects in Monolayer MoS$_2$},
  author = {Anupam Roy and Rudresh Ghosh and Amritesh Rai and Atresh Sanne and Kyounghwan Kim and Hema C. P. Movva and Rik Dey and Tanmoy Pramanik and Sayema Chowdhury and Emanuel Tutuc and Sanjay K. Banerjee},
  journal= {arXiv preprint arXiv:1705.03051},
  year   = {2017}
}

Comments

To appear in Appl. Phys. Lett. 13 pages, 3 figures. Includes Supplementary Material

Intra-Domain Periodic Defects in Monolayer MoS$_2$

Abstract

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