III-nitride on silicon electrically injected microrings for nanophotonic circuits
Abstract
Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm output power density at 20 mA from such microrings with diameters of 30 to 50 m. The first steps towards achieving an integrated photonic circuit are demonstrated.
Keywords
Cite
@article{arxiv.1904.03101,
title = {III-nitride on silicon electrically injected microrings for nanophotonic circuits},
author = {Farsane Tabataba-Vakili and Stéphanie Rennesson and Benjamin Damilano and Eric Frayssinet and Jean-Yves Duboz and Fabrice Semond and Iannis Roland and Bruno Paulillo and Raffaele Colombelli and Moustafa El Kurdi and Xavier Checoury and Sébastien Sauvage and Laetitia Doyennette and Christelle Brimont and Thierry Guillet and Bruno Gayral and Philippe Boucaud},
journal= {arXiv preprint arXiv:1904.03101},
year = {2019}
}