High frequency optomechanical disk resonators in III-V ternary semiconductors
Abstract
Optomechanical systems based on nanophotonics are advancing the field of precision motion measurement, quantum control and nanomechanical sensing. In this context III-V semiconductors offer original assets like the heteroepitaxial growth of optimized metamaterials for photon/phonon interactions. GaAs has already demonstrated high performances in optomechanics but suffers from two photon absorption (TPA) at the telecom wavelength, which can limit the cooperativity. Here, we investigate TPA-free III-V semiconductor materials for optomechanics applications: GaAs lattice-matched In0:5Ga0:5P and Al0:4Ga0:6As. We report on the fabrication and optical characterization of high frequency (500-700 MHz) optomechanical disks made out of these two materials, demonstrating high optical and mechanical Q in ambient conditions. Finally we achieve operating these new devices as laser-sustained optomechanical self-oscillators, and draw a first comparative study with existing GaAs systems.
Keywords
Cite
@article{arxiv.1710.00632,
title = {High frequency optomechanical disk resonators in III-V ternary semiconductors},
author = {Biswarup Guha and Silvia Mariani and Aristide Lemaître and Sylvain Combrié and Giuseppe Leo and Ivan Favero},
journal= {arXiv preprint arXiv:1710.00632},
year = {2017}
}
Comments
Optics Express, 2017