We report the growth, structure and characterization of BaZnGa, identifying it as the sole known ternary compound in the Ba-Zn-Ga system. Single crystals of BaZnGa can be grown out of excess Ba-Zn and adopt a tI36 structure type. There are three unique Ba sites and three M\,=\,Zn/Ga sites. Using DFT calculations we can argue that whereas one of these three M sites is probably solely occupied by Ga, the other two M sites, most likely, have mixed Zn/Ga occupancy. Temperature dependent resistivity and magnetization measurements suggest that BaZnGa is a poor metal with no electronic or magnetic phase transitions between 2\,K and 300\,K.
@article{arxiv.1706.09872,
title = {Growth and characterization of BaZnGa},
author = {Na Hyun Jo and Qisheng Lin and Manh Cuong Nguyen and Udhara S. Kaluarachchi and Wiliam R. Meier and Soham Manni and Savannah S. Downing and Anna E. Böhmer and Tai Kong and Yang Sun and Valentin Taufour and Cai-Zhuang Wang and Kai-Ming Ho and Sergey L. Bud'ko and Paul C. Canfield},
journal= {arXiv preprint arXiv:1706.09872},
year = {2017}
}