English

Ternary mixed-anion semiconductors with tunable band gaps from machine-learning and crystal structure prediction

Materials Science 2019-04-03 v1

Abstract

We report the computational investigation of a series of ternary X4_4Y2_2Z and X5_5Y2_2Z2_2 compounds with X={Mg, Ca, Sr, Ba}, Y={P, As, Sb, Bi}, and Z={S, Se, Te}. The compositions for these materials were predicted through a search guided by machine learning, while the structures were resolved using the minima hopping crystal structure prediction method. Based on ab initio\textit{ab initio} calculations, we predict that many of these compounds are thermodynamically stable. In particular, 21 of the X4_4Y2_2Z compounds crystallize in a tetragonal structure with I-42d\textit{I-42d} symmetry, and exhibit band gaps in the range of 0.3 and 1.8 eV, well suited for various energy applications. We show that several candidate compounds (in particular X4_4Y2_2Te and X4_4Sb2_2Se) exhibit good photo absorption in the visible range, while others (e.g., Ba4_4Sb2_2Se) show excellent thermoelectric performance due to a high power factor and extremely low lattice thermal conductivities.

Keywords

Cite

@article{arxiv.1812.02708,
  title  = {Ternary mixed-anion semiconductors with tunable band gaps from machine-learning and crystal structure prediction},
  author = {Maximilian Amsler and Logan Ward and Vinay I. Hegde and Maarten G. Goesten and Xia Yi and Chris Wolverton},
  journal= {arXiv preprint arXiv:1812.02708},
  year   = {2019}
}