English

Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

Mesoscale and Nanoscale Physics 2009-11-07 v2

Abstract

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is four orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

Keywords

Cite

@article{arxiv.cond-mat/0210118,
  title  = {Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices},
  author = {H. X. Tang and R. K. Kawakami and D. D. Awschalom and M. L. Roukes},
  journal= {arXiv preprint arXiv:cond-mat/0210118},
  year   = {2009}
}

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