English

Gate-Controllable Quadri-Layertronics in 2D Multiferroic Antiferromagnet

Materials Science 2024-11-12 v1 Computational Physics

Abstract

Layertronics that manifests layer Hall effect is typically considered to intrinsically possess binary physics. Using symmetry arguments and a low-energy kp model, we show that the layer physics in layertronics can be engineered into quaternary mode, giving rise to the concept of quadri-layertronics. The mechanism correlates to the interplay between out-of-plane ferroelectricity and valley physics in antiferromagnetic multiferroic quadrilayer, which enables the layer-locked Berry curvature and Hall effect, i.e., deflecting the carriers with four different layer physics to move in specific directions. More importantly, the quadri-layertronics can be generated and manipulated by controlling the interlayer dipole arrangements via a gate voltage, allowing for the selective induction and detection of layer Hall effect in specific layers. Using first principles calculations, we further demonstrate the gate control of quadri-layertronics in multiferroic antiferromagnet of quadrilayer OsCl2. These explored phenomena and insights greatly enrich the research on layertronics.

Keywords

Cite

@article{arxiv.2411.07016,
  title  = {Gate-Controllable Quadri-Layertronics in 2D Multiferroic Antiferromagnet},
  author = {Ting Zhang and Mingsheng Wang and Xilong Xu and Ying Dai and Yandong Ma},
  journal= {arXiv preprint arXiv:2411.07016},
  year   = {2024}
}
R2 v1 2026-06-28T19:55:36.447Z