GaSbBi alloys and heterostructures: fabrication and properties

O. Delorme; L. Cerutti; R. Kudrawiec; Esperanza Luna; J. Kopaczek; M. Gladysiewicz; A. Trampert; E. Tournié; J. -B. Rodriguez

doi:10.1007/978-981-13-8078-5_6

GaSbBi alloys and heterostructures: fabrication and properties

Materials Science 2019-10-25 v1

Authors: O. Delorme , L. Cerutti , R. Kudrawiec , Esperanza Luna , J. Kopaczek , M. Gladysiewicz , A. Trampert , E. Tournié , J. -B. Rodriguez

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Abstract

Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 $\mu$ m). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.

Keywords

gasbbi alloy heterostructure dilute bismide epitaxy mid-infrared optoelectronics

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@article{arxiv.1910.11210,
  title  = {GaSbBi alloys and heterostructures: fabrication and properties},
  author = {O. Delorme and L. Cerutti and R. Kudrawiec and Esperanza Luna and J. Kopaczek and M. Gladysiewicz and A. Trampert and E. Tournié and J. -B. Rodriguez},
  journal= {arXiv preprint arXiv:1910.11210},
  year   = {2019}
}

GaSbBi alloys and heterostructures: fabrication and properties

Abstract

Keywords

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