Gap modification of atomically thin boron nitride by phonon mediated interactions

J. P. Hague

doi:10.1186/1556-276X-7-303

Gap modification of atomically thin boron nitride by phonon mediated interactions

Mesoscale and Nanoscale Physics 2012-12-03 v2 Strongly Correlated Electrons

Authors: J. P. Hague

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Abstract

A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling \lambda=1, indicating that a proportion of the measured BN bandgap may have a phonon origin.

Keywords

hexagonal boron nitride phonon modes and lattice dynamics

Cite

@article{arxiv.1204.5412,
  title  = {Gap modification of atomically thin boron nitride by phonon mediated interactions},
  author = {J. P. Hague},
  journal= {arXiv preprint arXiv:1204.5412},
  year   = {2012}
}

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