English

Gain Stablization of SiPMs

Instrumentation and Detectors 2017-10-09 v2

Abstract

The gain of silicon photomultipliers (SiPMs) increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be adjusted to compensate temperature changes. We have tested this concept with 30 SiPMs from three manufacturers (Hamamatsu, KETEK, CPTA) in a climate chamber at CERN varying the temperature from 1C1^\circ \rm C to 50C50^\circ \rm C. We built an adaptive power supply that used a linear temperature dependence of the bias voltage readjustment. With one selected bias voltage readjustment, we stabilized four SiPMs simultaneously. We fulfilled our goal of limiting the deviation from gain stability in the 20C30C20^\circ \rm C-30^\circ C temperature range to less than ±0.5%\pm 0.5\% for most of the tested SiPMs. We have studied afterpulsing of SiPMs for different temperatures and bias voltages.

Keywords

Cite

@article{arxiv.1710.01648,
  title  = {Gain Stablization of SiPMs},
  author = {Gerald Eigen},
  journal= {arXiv preprint arXiv:1710.01648},
  year   = {2017}
}

Comments

20 pages, 18 figures, Talk presented at the APS Division of Particles and Fields Meeting (DPF 2017), July 31-August 4, 2017, Fermilab. C170731

R2 v1 2026-06-22T22:03:40.592Z