First-principles calculations of thermal electron emission from H$^-$ in silicon

Yoshiyuki Yamamoto; Alpin Novianus Tatan; Osamu Sugino

First-principles calculations of thermal electron emission from H$^-$ in silicon

Materials Science 2020-05-29 v1

Authors: Yoshiyuki Yamamoto , Alpin Novianus Tatan , Osamu Sugino

Abstract

Thermal electron emission process of a hydrogen impurity is an important topic of fundamental semiconductor physics. Despite of decades-long study, theory is not established yet. Here, we study the process of $\mathrm{H}^{-}$ in silicon, $\mathrm{H^{-}} \to \mathrm{H^{0}} + e^{-}$ , using a first-principles calculation. Our calculation indicates that the process consists of two steps: slow diffusion of H $^{-}$ from a tetrahedral site to a bond-center site, which is the rate-limiting step, and faster nonradiative transition from $\mathrm{H}^{-}$ to $\mathrm{H}^{0} + e^{-}$ that occurs subsequently at the body-center site. The calculated rate is consistent with a deep level transient spectroscopy experiment

Keywords

first-principles calculation thermal electron emission hydrogen impurity silicon deep level transient spectroscopy nonradiative transition

Cite

@article{arxiv.2005.14103,
  title  = {First-principles calculations of thermal electron emission from H$^-$ in silicon},
  author = {Yoshiyuki Yamamoto and Alpin Novianus Tatan and Osamu Sugino},
  journal= {arXiv preprint arXiv:2005.14103},
  year   = {2020}
}

First-principles calculations of thermal electron emission from H$^-$ in silicon

Abstract

Keywords

Cite

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