Ferroelectricity and Rashba effect in GeTe

C. Rinaldi; D. Di Sante; A. Giussani; R. -N. Wang; S. Bertoli; M. Cantoni; L. Baldrati; I. Vobornik; G. Panaccione; R. Calarco; S. Picozzi; R. Bertacco

doi:10.1002/adma.201503459

Ferroelectricity and Rashba effect in GeTe

Materials Science 2021-03-16 v1

Authors: C. Rinaldi , D. Di Sante , A. Giussani , R. -N. Wang , S. Bertoli , M. Cantoni , L. Baldrati , I. Vobornik , G. Panaccione , R. Calarco , S. Picozzi , R. Bertacco

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Abstract

GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors. In nice agreement with first principle calculations, we show by angular resolved photoemission and piezo-force microscopy that GeTe displays surface and bulk Rashba bands arising from the intrinsic inversion symmetry breaking provided by the remanent ferroelectric polarization. This work points to the possibility to control the spin chirality of bands in GeTe by acting on its ferroelectric polarization.

Keywords

rashba spin-orbit coupling

Cite

@article{arxiv.1412.2386,
  title  = {Ferroelectricity and Rashba effect in GeTe},
  author = {C. Rinaldi and D. Di Sante and A. Giussani and R. -N. Wang and S. Bertoli and M. Cantoni and L. Baldrati and I. Vobornik and G. Panaccione and R. Calarco and S. Picozzi and R. Bertacco},
  journal= {arXiv preprint arXiv:1412.2386},
  year   = {2021}
}

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10 pages, 4 figures

Ferroelectricity and Rashba effect in GeTe

Abstract

Keywords

Cite

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