We investigate the interaction between interlayer excitons and ferroelectric domains in hBN-encapsulated 3R-MoS2/MoSe2 heterostructures, combining photoluminescence experiments with density functional theory and many-body Green's function calculations. Low-temperature photoluminescence spectroscopy reveals a strong redshift of the interlayer exciton energy with increasing MoS2 layer thickness, attributed to band renormalization and dielectric effects. We observe local variations in exciton energy that correlate with local ferroelectric domain polarization of the 3R-MoS2 layer, showcasing distinct domain-dependent interlayer exciton transition energies. Gate voltage experiments demonstrate that the interlayer exciton energy can be tuned by electrically induced domain switching. These results highlight the potential for interlayer exciton control by local ferroelectric order and establish a foundation for future ferroelectric optoelectronic devices based on van der Waals heterostructures.
@article{arxiv.2508.08911,
title = {Ferroelectric Control of Interlayer Excitons in 3R-MoS$_{2}$ / MoSe$_{2}$ Heterostructures},
author = {Johannes Schwandt-Krause and Mohammed El Amine Miloudi and Elena Blundo and Swarup Deb and Jan-Niklas Heidkamp and Kenji Watanabe and Takashi Taniguchi and Rico Schwartz and Andreas Stier and Jonathan J. Finley and Oliver Kühn and Tobias Korn},
journal= {arXiv preprint arXiv:2508.08911},
year = {2026}
}