BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10^19-10^20 cm^-3. Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm^2/Vs. The absorption coefficient is > 10^5 cm-1 at photon energy > 1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. These results assure that BaZrS3 is a promising candidate for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.
@article{arxiv.1910.04978,
title = {Fabrication of BaZrS3 chalcogenide perovskite thin films for optoelectronics},
author = {Xiucheng Wei and Haolei Hui and Chuan Zhao and Chenhua Deng and Mengjiao Han and Zhonghai Yu and Aaron Sheng and Pinku Roy and Aiping Chen and Junhao Lin and David F. Watson and Yiyang Sun and Tim Thomay and Sen Yang and Quanxi Jia and Shengbai Zhang and Hao Zeng},
journal= {arXiv preprint arXiv:1910.04978},
year = {2019}
}