We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.
@article{arxiv.1610.04882,
title = {Chalcogenide Perovskites- an Emerging Class of Ionic Semiconductors},
author = {Samanthe Pereraa and Haolei Huia and Chuan Zhao and Hongtao Xue and Fan Sun and Chenhua Deng and Nelson Gross and Chris Milleville and Xiaohong Xu and David F. Watson and Bernard Weinstein and Yi-Yang Sun and Shengbai Zhang and Hao Zeng},
journal= {arXiv preprint arXiv:1610.04882},
year = {2016}
}