A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

Kevin Ye; Ida Sadeghi; Michael Xu; Jack Van Sambeek; Tao Cai; Jessica Dong; Rishabh Kothari; James M. LeBeau; R. Jaramillo

A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

Materials Science 2024-03-15 v1

Authors: Kevin Ye , Ida Sadeghi , Michael Xu , Jack Van Sambeek , Tao Cai , Jessica Dong , Rishabh Kothari , James M. LeBeau , R. Jaramillo

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Abstract

We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology.

Keywords

chalcogenide perovskite anion exchange tunable band gap selenization thin films photoconductive response

Cite

@article{arxiv.2403.09016,
  title  = {A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange},
  author = {Kevin Ye and Ida Sadeghi and Michael Xu and Jack Van Sambeek and Tao Cai and Jessica Dong and Rishabh Kothari and James M. LeBeau and R. Jaramillo},
  journal= {arXiv preprint arXiv:2403.09016},
  year   = {2024}
}

A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

Abstract

Keywords

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