Formation, emission and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs having nano-pan-cake shape have height of ~2 nm, lateral size of 20-50 nm and density of ~5x109 cm-2. Their emission observed at ~940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character indicating In-As intermixing, as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having dimeter ~3.2 mkm and providing free spectral range of ~27 nm and quality factors up to Q~13000. Threshold of ~50 W/cm2 and spontaneous emission coupling coefficient of ~0.2 were measured for this MD-QD system.
@article{arxiv.1704.01635,
title = {Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk},
author = {D. V. Lebedev and M. M. Kulagina and S. I. Troshkov and A. A. Bogdanov and A. S. Vlasov and V. Yu. Davydov and A. N. Smirnov and J. L. Merz and J. Kapaldo and A. Gocalinska and G. Juska and S. T. Moroni and E. Pelucchi and D. Barettin and S. Rouvimov and A. M. Mintairov},
journal= {arXiv preprint arXiv:1704.01635},
year = {2017}
}