Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton-phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton-phonon coupling strength has not been measured at room temperature. Here, we develop two-dimensional micro-spectroscopy to determine exciton-phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time T, induced by the coupling between the A exciton and the A'1 optical phonon. Analysis of two-dimensional beating maps combined with simulations provides the exciton-phonon coupling. The Huang-Rhys factor of ~1 is larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure exciton-phonon coupling also in other heterogeneous semiconducting systems with a spatial resolution ~260 nm, and will provide design-relevant parameters for the development of optoelectronic devices.
@article{arxiv.2012.11492,
title = {Exciton-phonon coupling strength in single-layer MoSe2 at room temperature},
author = {Donghai Li and Chiara Trovatello and Stefano Dal Conte and Matthias Nuß and Giancarlo Soavi and Gang Wang and Andrea C. Ferrari and Giulio Cerullo and Tobias Brixner},
journal= {arXiv preprint arXiv:2012.11492},
year = {2021}
}