Effect of exciton-phonon coupling on the interlayer excitons in transition metal dichalcogenides double layers

We investigate the correction of interlayer exciton binding energy in transition metal dichalcogenides double layers arising from the exciton-optical phonon coupling using the method of Lee-Low-Pines unitary transformation. We find that the binding energy varies in several tens of meV, depending on the polarizability of materials and interlayer distance between double layers. Moreover, the correction of binding energy results in the remarkable increasing of the critical temperature for the condensation of dilute excitonic gas basing on the Berezinskii-Kosterlitz-Thouless model. These results not only enrich the knowledge for the modulation of interlayer exciton, but also provide potential insights for the Bose-Einstein condensation and superfluid transport of interlayer exciton in two-dimensional heterostructures.