Exciton-exciton annihilation in hBN

Alexandre Plaud; Léonard Schué; Kenji Watanabe; Takashi Taniguchi; Annick Loiseau; Julien Barjon

doi:10.1063/1.5090218

Exciton-exciton annihilation in hBN

Mesoscale and Nanoscale Physics 2019-07-24 v1 Materials Science

Authors: Alexandre Plaud , Léonard Schué , Kenji Watanabe , Takashi Taniguchi , Annick Loiseau , Julien Barjon

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride (hBN) by cathodoluminescence at low temperature. Thanks to a careful tune of the the exciton density by varying either the current or the focus of the incident electron beam, we could estimate an EEA rate of 2 $\times$ 10 $^{-6}$ cm $^{3}$ .s $^{-1}$ at $T=10$ K, the highest reported so far for a bulk semiconductor. Expected to be even stronger in nanotubes or atomic layers, EEA probablly contributes to the luminescence quenching observed in low-dimensionality BN materials.

Keywords

exciton-exciton annihilation hexagonal boron nitride cathodoluminescence bulk semiconductor luminescence quenching

Cite

@article{arxiv.1905.07133,
  title  = {Exciton-exciton annihilation in hBN},
  author = {Alexandre Plaud and Léonard Schué and Kenji Watanabe and Takashi Taniguchi and Annick Loiseau and Julien Barjon},
  journal= {arXiv preprint arXiv:1905.07133},
  year   = {2019}
}

Exciton-exciton annihilation in hBN

Abstract

Keywords

Cite

Related papers