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Related papers: Exciton-exciton annihilation in hBN

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Exciton-exciton annihilation (EEA), in which two excitons interact to generate high-energy excitations, is an important non-radiative channel in light-induced excited-state relaxation. When efficient, this process offers an alternative…

Materials Science · Physics 2025-06-06 Guy Vosco , Sivan Refaely-Abramson

Rapid exciton-exciton annihilation (EEA) in two-dimensional semiconductors limits access to high-density excitonic regimes essential for efficient optoelectronic operation under strong excitation. Here, we show that EEA is suppressed by…

Mesoscale and Nanoscale Physics · Physics 2026-03-19 Tae Gwan Park , Xufan Li , Kyungnam Kang , David B. Geohegan , Christopher M. Rouleau , Alexander A. Puretzky , Kai Xiao

Auger-like exciton-exciton annihilation (EEA) is considered the key fundamental limitation to quantum yield in devices based on excitons in two-dimensional (2d) materials. Since it is challenging to experimentally disentangle EEA from…

Mesoscale and Nanoscale Physics · Physics 2021-10-12 Alexander Steinhoff , Matthias Florian , Frank Jahnke

Two-dimensional (2D) semiconductors possess strongly bound excitons, opening novel opportunities for engineering light-matter interaction at the nanoscale. However, their in-plane confinement leads to large non-radiative exciton-exciton…

Mesoscale and Nanoscale Physics · Physics 2023-04-13 Luca Sortino , Merve Gülmüs , Benjamin Tilmann , Leonardo de S. Menezes , Stefan A. Maier

We quantitatively illustrate the fundamental limit that exciton-exciton annihilation (EEA) may impose to the light emission of monolayer transition metal dichalcogenide (TMDC) materials. The EEA in TMDC monolayers shows dependence on the…

Optics · Physics 2016-06-01 Yiling Yu , Yifei Yu , Chao Xu , Andy Barrette , Kenan Gundogdu , Linyou Cao

The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through…

Exciton-exciton annihilation (EEA) and Auger recombination are detrimental processes occurring in semiconductor optoelectronic devices at high carrier densities. Despite constituting one of the main obstacles for realizing lasing in…

Mesoscale and Nanoscale Physics · Physics 2020-10-29 Moritz Gramlich , Bernhard J. Bohn , Yu Tong , Lakshminarayana Polavarapu , Jochen Feldmann , Alexander S. Urban

The strong excitonic emission at 5.75 eV of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect…

Excitons -- elementary excitations formed by bound electron-hole pairs -- govern the optical properties and excited-state dynamics of materials. In two-dimensions (2D), excitons are theoretically predicted to have a linear energy-momentum…

Materials Science · Physics 2025-03-14 Luna Y. Liu , Steffi Y. Woo , Jinyuan Wu , Bowen Hou , Cong Su , Diana Y. Qiu

Optical excitations in hexagonal nanonetwork materials, for example, Boron-Nitride (BN) sheets and nanotubes, are investigated theoretically. A permanent electric dipole moment, whose direction is from the B site to the N site, is…

Optics · Physics 2016-09-08 Kikuo Harigaya

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative…

A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (hBN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals. A high quantum yield…

We report resonant inelastic X-ray scattering (RIXS) measurements on the prototypical hexagonal boron nitride hBN layered compound. The RIXS results at the B and N K edges have been combined with electron energy loss spectroscopy (EELS)…

We have combined spatially-resolved steady-state micro-photoluminescence ($\mu$PL) with time-resolved photoluminescence (TRPL) to investigate the exciton diffusion in a WSe$_2$ monolayer encapsulated with hexagonal boron nitride (hBN). At…

Mesoscale and Nanoscale Physics · Physics 2018-05-09 F. Cadiz , C. Robert , E. Courtade , M. Manca , L. Martinelli , T. Taniguchi , K. Watanabe , T. Amand , A. C. H. Rowe , D. Paget , B. Urbaszek , X. Marie

A combination of ultrafast, long-range and low-loss excitation energy transfer from the photo-receptor location to a functionally active site is essential for cost-effective polymeric semiconductors. Delocalized electronic wavefunctions…

Optical excitations in hexagonal nanonetwork materials, for example, Boron-Nitride (BN) sheets and nanotubes, are investigated theoretically. The bonding of BN systems is positively polarized at the B site, and is negatively polarized at…

Materials Science · Physics 2016-08-31 Kikuo Harigaya

Understanding and controlling the way excitons propagate in solids is a key for tailoring materials with improved optoelectronic properties. A fundamental step in this direction is the determination of the exciton energy-momentum…

We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the…

Monolayer materials are strongly affected by their potential fluctuations, which are induced by an intrinsic corrugation or the surface roughness of the substrate. We compare the effective exciton-exciton annihilation (EEA) rate constants…

We report first-principles calculations of the effects of quasiparticle self-energy and electron-hole interaction on the optical properties of single-walled BN nanotubes. Excitonic effects are shown to be even more important in BN nanotubes…

Materials Science · Physics 2007-08-23 Cheol-Hwan Park , Catalin D. Spataru , Steven G. Louie
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