Epitaxial Growth and Band Structure of Antiferromagnetic Mott Insulator CeOI

Xinqiang Cai; Zhilin Xu; Hui Zhou; Jun Ren; Na Li; Sheng Meng; Shuai-Hua Ji; Xi Chen

Epitaxial Growth and Band Structure of Antiferromagnetic Mott Insulator CeOI

Materials Science 2020-05-12 v1

Authors: Xinqiang Cai , Zhilin Xu , Hui Zhou , Jun Ren , Na Li , Sheng Meng , Shuai-Hua Ji , Xi Chen

Abstract

The van der Waals material CeOI is predicted to be a layered antiferromagnetic Mott insulator by DFT+U calculation. We successfully grow the CeOI films down to monolayer on graphene/6H-SiC(0001) substrate by using molecular beam epitaxy. Films are studied by {\it in-situ} scanning tunneling microscopy and spectroscopy, which shows a band gap of 4.4 eV. A metallic phase with composition unidentified also exists. This rare earth oxyhalide adds a new member to the two-dimensional magnetic materials.

Keywords

ceoi antiferromagnetic mott insulator molecular beam epitaxy scanning tunneling microscopy two-dimensional magnetic materials band gap

Cite

@article{arxiv.2005.04359,
  title  = {Epitaxial Growth and Band Structure of Antiferromagnetic Mott Insulator CeOI},
  author = {Xinqiang Cai and Zhilin Xu and Hui Zhou and Jun Ren and Na Li and Sheng Meng and Shuai-Hua Ji and Xi Chen},
  journal= {arXiv preprint arXiv:2005.04359},
  year   = {2020}
}

Comments

6 pages, 6 figures

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