Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)

Z. Ding; P. M. Thibado; C. Awo-Affouda; V. P. LaBella

doi:10.1116/1.1771674

Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)

Mesoscale and Nanoscale Physics 2015-06-24 v1 Materials Science

Authors: Z. Ding , P. M. Thibado , C. Awo-Affouda , V. P. LaBella

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Abstract

We have deposited Co films on the GaAs(001) surface by using an e-beam evaporation method. The thicknesses of the Co films are measured by using x-ray reflectivity and Rutherford backscattering. The magnetic properties of the films have been measured using superconducting quantum interference device. The magnetization of the films was found to decrease with increasing film thickness. The slight degradation of magnetic properties is attributed to increasing roughness on the Co surface or the Co/GaAs interface during the Co deposition.

Keywords

cobalt films GaAs(001) electron-beam evaporation molecular beam epitaxy x-ray reflectivity Rutherford backscattering magnetic properties superconducting quantum interference device

Cite

@article{arxiv.1503.03458,
  title  = {Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)},
  author = {Z. Ding and P. M. Thibado and C. Awo-Affouda and V. P. LaBella},
  journal= {arXiv preprint arXiv:1503.03458},
  year   = {2015}
}

Comments

8 pages, 4 figures

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