We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS2 transistor. A single crystalline, epitaxially grown, PbZr0.2Ti0.8O3 (PZT) was placed in the gate of a field effect transistor made of thin film MoS2. When a gate voltage is applied to this ferroelectric gated transistor, a clear transition from insulator to metal and vice versa is observed. Importantly, when the gate voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS2 in its original phase, thereby providing a non-volatile state. Thus a metallic or insulating phase can be written, erased or retained simply by applying a gate voltage to the transistor.
@article{arxiv.1705.06375,
title = {Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor},
author = {Zhongyuan Lu and Claudy Serrao and Asif I. Khan and James D. Clarkson and Justin C. Wong and Ramamoorthy Ramesh and Sayeef Salahuddin},
journal= {arXiv preprint arXiv:1705.06375},
year = {2018}
}