Elastic Strain Fields In Lateral Double Ge/Si Quantum Dots
Mesoscale and Nanoscale Physics
2017-01-25 v1
Abstract
Simulations of the elastic strain fields for double Ge/Si quantum dots located on the same wetting layer are carried out. The cluster approximation is used for the atomistic model based on the Keating potential. The spatial distributions of the strain energy density and electron potential energy are calculated using clusters containing atoms of 150 coordination spheres. It is shown that the used cluster boundary conditions are close to the periodic boundary conditions.
Cite
@article{arxiv.1701.06654,
title = {Elastic Strain Fields In Lateral Double Ge/Si Quantum Dots},
author = {Yu. N. Morokov and M. P. Fedoruk},
journal= {arXiv preprint arXiv:1701.06654},
year = {2017}
}
Comments
13 pages, 17 figures. arXiv admin note: text overlap with arXiv:1601.04762