Device model of silicon nanowire bioFETs
Chemical Physics
2012-12-14 v1 Materials Science
Abstract
A device model of biological molecule sensors based on semiconductor nanowires has been developed. This model of a bioFET is based on the concept of the electrolytic absolute electrode potential. From that starting point a semiconductor device model of the nanowire solution biomolecule system was derived. The model includes the Gouy-Chapman-Stern model of the salt solution double layer, site binding charges on the electrode surface, and biological molecules in the form of a membrane layer. A simple method of solving this model is presented using the finite element method. Some examples showing the general properties of the model are given.
Keywords
Cite
@article{arxiv.1212.3309,
title = {Device model of silicon nanowire bioFETs},
author = {M. W. Denhoff},
journal= {arXiv preprint arXiv:1212.3309},
year = {2012}
}
Comments
16 pages, 5 figures, example source code