Description of the plasma delay effect in silicon detectors
Nuclear Theory
2015-06-03 v1
Abstract
A new method of modeling of the current signal induced by charged particle in silicon detectors is presented. The approach is based on the Ramo-Shockley theorem for which the charge carrier velocities are determined by taking into account not only the external electric field generated by the electrodes, but also the Coulomb interaction between the electron and hole clouds as well as their diffusion.
Keywords
Cite
@article{arxiv.1201.2188,
title = {Description of the plasma delay effect in silicon detectors},
author = {Zbigniew Sosin},
journal= {arXiv preprint arXiv:1201.2188},
year = {2015}
}
Comments
8 figures