The structure of the ultimately-thin crystalline allotrope of silicon oxide, prepared onto a ruthenium surface, is unveiled down to atomic scale with chemical sensitivity, thanks to high resolution scanning tunneling microscopy and first principle calculations. An ordered oxygen lattice is imaged which coexists with the two-dimensional monolayer oxide. This coexistence signals a displacive transformation from an oxygen reconstructed-Ru(0001) to silicon oxide, along which latterally-shifted domains form, each with equivalent and degenerate epitaxial relationships with the substrate. The unavoidable character of defects at boundaries between these domains appeals for the development of alternative methods capable of producing single-crystalline two-dimensional oxides.
@article{arxiv.1510.08607,
title = {Degenerate epitaxy-driven defects in monolayer silicon oxide onto ruthenium},
author = {Shashank Mathur and Sergio Vlaic and Eduardo Machado-Charry and Anh-Duc Vu and Valérie Guisset and Philippe David and Emmanuel Hadji and Pascal Pochet and Johann Coraux},
journal= {arXiv preprint arXiv:1510.08607},
year = {2015}
}