English

CVD of CrO2: towards a lower temperature deposition process

Materials Science 2007-05-23 v1 Other Condensed Matter

Abstract

We report on the synthesis of highly oriented a-axis CrO2 films onto (0001) sapphire by atmospheric pressure CVD from CrO3 precursor, at growth temperatures down to 330 degree Celsius, i.e. close to 70 degrees lower than in published data for the same chemical system. The films keep the high quality magnetic behaviour as those deposited at higher temperature, which can be looked as a promising result in view of their use with thermally sensitive materials, e.g. narrow band gap semiconductors.

Keywords

Cite

@article{arxiv.cond-mat/0701671,
  title  = {CVD of CrO2: towards a lower temperature deposition process},
  author = {P. M. Sousa and S. A. Dias and A. J. Silvestre and O. Conde and B. Morris and K. A. Yates and W. R. Branford and L. F. Cohen},
  journal= {arXiv preprint arXiv:cond-mat/0701671},
  year   = {2007}
}

Comments

13 pages, 4 figures