Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrated SAG NW circuits consisting of 512 channel multiplexer/demultiplexer pairs, incorporating thousands of interconnected SAG NWs operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increase the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical SAG quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future SAG quantum circuits.
@article{arxiv.2304.12765,
title = {Cryogenic Multiplexing with Bottom-Up Nanowires},
author = {Dāgs Olšteins and Gunjan Nagda and Damon J. Carrad and Daria V. Beznasiuk and Christian E. N. Petersen and Sara Martí-Sánchez and Jordi Arbiol and Thomas Sand Jespersen},
journal= {arXiv preprint arXiv:2304.12765},
year = {2024}
}