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Related papers: Cryogenic Multiplexing with Bottom-Up Nanowires

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Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG…

New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for…

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can…

Mesoscale and Nanoscale Physics · Physics 2013-06-19 H. Al-Taie , L. W. Smith , B. Xu , P. See , J. P. Griffiths , H. E. Beere , G. A. C. Jones , D. A. Ritchie , M. J. Kelly , C. G. Smith

Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum…

The challenges of operating qubits in a cryogenic environment point to a looming bottleneck for large-scale quantum processors, limited by the number of input-output connections. Classical processors solve this problem via multiplexing;…

Mesoscale and Nanoscale Physics · Physics 2024-10-18 M. A. Wolfe , Thomas McJunkin , Daniel R. Ward , DeAnna Campbell , Mark Friesen , M. A. Eriksson

Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully…

Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit…

Mesoscale and Nanoscale Physics · Physics 2014-07-23 H. Al-Taie , L. W. Smith , B. Xu , P. See , J. P. Griffiths , H. E. Beere , G. A. C. Jones , D. A. Ritchie , M. J. Kelly , C. G. Smith

In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, and quantum devices. However, defects and disorder at the…

Mesoscale and Nanoscale Physics · Physics 2025-05-12 Pradip Adhikari , Anjali Rathore , Dayrl P Briggs , Srijanto R Bernadeta , Joon Sue Lee

Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for quantum information processing. We use selective area growth…

Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability has been one of the significant bottleneck challenges facing the potential integration of nanowires for both nano and macro electronic circuit…

Solid-state quantum emitters are excellent sources of on-demand indistinguishable or entangled photons and can host long-lived spin memories, crucial resources for photonic quantum information applications. However, their scalability…

Mesoscale and Nanoscale Physics · Physics 2020-09-07 Zhe-Xian Koong , Guillem Ballesteros-Garcia , Raphaël Proux , Dan Dalacu , Philip J. Poole , Brian D. Gerardot

Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip…

Mesoscale and Nanoscale Physics · Physics 2015-06-15 Daniel R. Ward , D. E. Savage , M. G. Lagally , S. N. Coppersmith , M. A. Eriksson

Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si…

Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibility to grow semiconductor nanowires in arbitrary geometries,…

Enhancement of thermal conductivity via surface electromagnetic waves (SEWs) supported in nanostructures has recently drawn attention as a remedy for issues raised due to the reduction of thermal conductivity in nanoscale confinement. Among…

Applied Physics · Physics 2019-10-03 Mikyung Lim , Jose Ordonez-Miranda , Seung S. Lee , Bong Jae Lee , Sebastian Volz

Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled…

Semiconductor-superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top-down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes…

Today's hundred-qubit quantum computers require a dramatic scale up to millions of qubits to become practical for solving real-world problems. Although a variety of qubit technologies have been demonstrated, scalability remains a major…

Quantum Physics · Physics 2022-10-31 Sanskriti Joshi , Sajjad Moazeni

Semiconductor nanowires (NWs) are promising for realizing various on-chip nonlinear optical devices, due to their nanoscale lateral confinement and strong light-matter interaction. However, high-intensity pulsed pump lasers are typically…

Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…

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