Controlling Electronic Structure Through Epitaxial Strain in ZnSe/ZnTe Nano-heterostructures

Satyesh Kumar Yadav; Vinit Sharma; Rampi Ramprasad

doi:10.1063/1.4923385

Controlling Electronic Structure Through Epitaxial Strain in ZnSe/ZnTe Nano-heterostructures

Materials Science 2015-07-14 v2

Authors: Satyesh Kumar Yadav , Vinit Sharma , Rampi Ramprasad

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Abstract

Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe heterostructures. We find that a wide range of band gaps (spanning the visible solar spectrum) and band offsets (0-1.5 eV) is accessible across the heterostructures in a controllable manner via reasonable levels of epitaxial strain. In addition to quantum confinement effects, strain in ZnSe/ZnTe heterostructures may thus be viewed as a powerful degree of freedom that can enable the rational design of optoelectronic devices.

Keywords

epitaxial strain ZnSe/ZnTe nano-heterostructures electronic structure first-principles computations band gaps optoelectronic devices

Cite

@article{arxiv.1505.01217,
  title  = {Controlling Electronic Structure Through Epitaxial Strain in ZnSe/ZnTe Nano-heterostructures},
  author = {Satyesh Kumar Yadav and Vinit Sharma and Rampi Ramprasad},
  journal= {arXiv preprint arXiv:1505.01217},
  year   = {2015}
}

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